Title :
The influence of titanium dioxide additive on the short-term DC breakdown strength of polyethylene
Author :
Khalil, M. Salah ; Henk, P.O. ; Henriksen, M.
Author_Institution :
Danish Electr. Res. Inst., Lyngby, Denmark
Abstract :
The effect of the addition of 1% by weight of titanium dioxide fine particles to low-density polyethylene (LDPE) on the short-term DC breakdown strength of the LDPE was investigated using direct and reverse polarity voltages. The samples used were cylinders of both plain and doped materials, with hemispherically tipped cylindrical electrodes completely embedded in the material, with a minimum gap length between the electrode tips of 0.25 mm. All tests were conducted at room temperature. Results indicate that, although the addition of TiO2 reduces the DC breakdown strength of the doped material if compared to the plain material, it significantly improves its DC reverse polarity characteristics. The doped material seems to be insensitive to the DC polarity reversals. The observed beneficial effect of the addition of TiO2 on the DC reverse polarity characteristics is attributed to the role of this additive in modifying the trapping levels in the polymer, and the consequent change in the space charge pattern in the doped material
Keywords :
composite insulating materials; electric strength; filled polymers; insulation testing; materials testing; organic insulating materials; titanium compounds; 0.25 mm; DC polarity reversals; DC reverse polarity characteristics; LDPE; TiO2 additive; TiO2 particles filled polyethylene; cylindrical samples; embedded electrodes; filled XLPE; gap length; hemispherically tipped cylindrical electrodes; low-density polyethylene; plain XLPE; polyethylene; reverse polarity voltages; room temperature; short-term DC breakdown strength; space charge pattern; Additives; Breakdown voltage; Conducting materials; Electric breakdown; Electrodes; Polyethylene; Polymers; Temperature; Testing; Titanium;
Conference_Titel :
Electrical Insulation, 1990., Conference Record of the 1990 IEEE International Symposium on
Conference_Location :
Toronto, Ont.
DOI :
10.1109/ELINSL.1990.109753