Title :
Simulation of intermodulation distortion in passive CMOS FET mixers
Author :
Khatri, Himanshu ; Gudem, Prasad S. ; Larson, Lawrence E.
Author_Institution :
Univ. of California San Diego, La Jolla, CA, USA
Abstract :
The simulation of third-order intermodulation distortion in a passive CMOS FET mixer will typically predict a fictitious 2:1 slope using the industry standard EKV, BSIM3 and BSIM4 models. This phenomenon has been attributed to the discontinuity in the second-order derivatives of the drain-current and the terminal charge model. This paper establishes the connection between the discontinuous derivatives and the resulting intermodulation distortion slope and provides experimental verification.
Keywords :
CMOS integrated circuits; MOSFET; intermodulation distortion; mixers (circuits); passive networks; semiconductor device models; BSIM3 model; BSIM4 model; EKV model; discontinuous derivatives; drain-current model; intermodulation distortion; passive CMOS FET mixer; semiconductor device modelling; terminal charge model; 1f noise; Energy consumption; FETs; Intermodulation distortion; MOSFETs; Nonlinear distortion; Polynomials; Predictive models; Semiconductor device modeling; Voltage; BSIM; EKV; Gummel symmetry; PSP; Passive mixer; Semiconductor device modeling;
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5166016
