Title :
Single crystal and polycrystalline CuInSe2 by the hybrid sputtering and evaporation method
Author :
Yang, L. Chung ; Chou, L.J. ; Agarwal, A. ; Rockett, A.
Author_Institution :
Dept. of Mater. Sci. & Eng., Illinois Univ., Urbana, IL, USA
Abstract :
Polycrystalline and single-crystal CuInSe2 has been grown by the hybrid sputtering and evaporation process. The solar cells were 0.08 cm2. The maximum conversion efficiency recorded was 8.4% with Voc=392 mV, JSC=33.9 mA, and a fill factor of 63.1%. Single-crystal CuInSe2 thin films were deposited on GaAs (001)- and (111)-oriented substrates and exhibited (002) and (112) surface orientations, respectively. The single crystals exhibit evidence for faceting on (112)-type planes with a clear preference for one of the sets of planes over the other. The tendency to form facets depends on both the substrate surface preparation and the film stoichiometry
Keywords :
copper compounds; indium compounds; semiconductor thin films; solar cells; sputtered coatings; sputtering; ternary semiconductors; vapour deposited coatings; vapour deposition; 33.9 mA; 392 mV; 8.4 percent; CuInSe2; GaAs; evaporation; faceting; fill factor; semiconductor thin films; solar cells; sputtering; stoichiometry; surface preparation; vapour deposition; Gallium arsenide; IEC; Photovoltaic cells; Rough surfaces; Scanning electron microscopy; Sputtering; Substrates; Surface roughness; Testing; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169398
