Title :
Advances in novel deposition technology for CuInSe2 solar cells
Author :
Attar, G. ; Cai, L. ; Morel, D.L. ; Lai, J.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
Abstract :
The authors have fabricated low-defect-level CIS using a novel deposition technology which avoids use of H2Se. Thin-film transistors have been fabricated and are serving as an effective tool in understanding and advancing junction performance. Contamination effects at junction interfaces due to instabilities in the CIS surface and defect generation associated with ZnO deposition have been observed and are limiting ZnO/CIS heterojunction performance in solar cells
Keywords :
copper compounds; indium compounds; p-n heterojunctions; semiconductor thin films; solar cells; sputtered coatings; sputtering; ternary semiconductors; vapour deposited coatings; vapour deposition; CuInSe2; defect generation; deposition; heterojunction; junction performance; semiconductor thin films; solar cells; sputtering; transistors; vapour deposition; Computational Intelligence Society; Conductive films; Conductivity; Fabrication; Indium; Insulation; Manufacturing processes; Photovoltaic cells; Temperature; Thin film transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169399
