Title :
A study of the fabrication of flip-chip bumps using dry-film photoresist process on 300 mm wafer
Author :
Ke, Zhi-Ting ; Lee, Cheng-Shih ; Shen, Keng-Huei ; Chang, Edward Yi
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
This work is to study the dry-film photoresist to form patterns for flip-chip bumps on 300 mm wafers. The so-called "double-deck metal seed layer" process was also applied in this study by using sputtered 1000 Å Ti (Titanium) and 5000 Å Cu (Copper) metal layers. By welding the metal and solder electroplating technology on the chip of the integrated circuits, Cu/Ni/solder alloy fill up hole under bumps metallization after solder re-flowing at 220°C. This research optimizes the parameters of the dry-film photoresist, lithography technology, metal sputtering technology and metal electroplating technology.
Keywords :
copper; electroplating; flip-chip devices; integrated circuit manufacture; integrated circuit metallisation; photoresists; reflow soldering; semiconductor technology; sputtering; titanium; 1000 A; 220 C; 300 mm; 5000 A; Cu; Ti; double-deck metal seed layer process; dry-film photoresist process; flip-chip bumps; integrated circuits; lithography technology; metal electroplating technology; metal sputtering technology; wafers; welding; Copper alloys; Fabrication; Integrated circuit metallization; Integrated circuit technology; Lithography; Nickel alloys; Resists; Sputtering; Titanium; Welding;
Conference_Titel :
Semiconductor Manufacturing Technology Workshop Proceedings, 2004
Print_ISBN :
0-7803-8469-5
DOI :
10.1109/SMTW.2004.1393724
