Title :
A CMOS bandgap and sub-bandgap voltage reference circuits for nanowatt power LSIs
Author :
Hirose, Tetsuya ; Ueno, Ken ; Kuroki, Nobutaka ; Numa, Masahiro
Author_Institution :
Dept. of Electr. & Electron. Eng., Kobe Univ., Kobe, Japan
Abstract :
This paper proposes CMOS bandgap reference (BGR) and sub-BGR circuits without resistors for nanowatt power LSIs. The BGR circuit consists of a nano-ampere current reference, a bipolar transistor, and a proportional to absolute temperature (PTAT) voltage generator. The PTAT voltage generator consists of source-coupled differential pairs and generates a positive temperature dependent voltage. The PTAT voltage generator compensates for negative temperature dependence of a base-emitter voltage in a PNP bipolar transistor. The circuit generates a bandgap voltage of silicon. The sub-BGR circuit uses a voltage divider to generate low-voltage sub-bandgap reference. Experimental results demonstrated that the BGR and sub-BGR circuits can generate a 1.18-V and 553-mV reference voltages, respectively. The power dissipation of the BGR and sub-BGR circuits were 108-nW and 110-nW, respectively.
Keywords :
CMOS integrated circuits; bipolar transistor circuits; large scale integration; power aware computing; voltage dividers; CMOS bandgap; PNP bipolar transistor; base-emitter voltage; nano-ampere current reference; nanowatt power LSI; negative temperature dependence; power 108 nW; power 110 nW; proportional to absolute temperature voltage generator; sub-bandgap voltage reference circuits; voltage 1.18 V; voltage 553 mV; voltage divider; CMOS integrated circuits; Generators; Photonic band gap; Resistors; Temperature dependence; Temperature measurement; Threshold voltage;
Conference_Titel :
Solid State Circuits Conference (A-SSCC), 2010 IEEE Asian
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-8300-6
DOI :
10.1109/ASSCC.2010.5716561