Title :
Fully analytical charge sheet model with quantum mechanical effects for short channel MOSFETs
Author :
Jayadeva, G.S. ; DasGupta, Amitava
Author_Institution :
Dept. of Electr. Eng., IIT Madras, Chennai, India
Abstract :
An analytical model for deep submicron MOSFETs based on quantum charge-sheet approximation including the drift-diffusion equation is presented. In this model the surface potential is obtained analytically considering quantum mechanical effects in the inversion region. The field dependent mobility variations, velocity saturation of carriers and secondary effects such as DIBL and channel length modulation have been incorporated in this model, which shows excellent match with experimental data and two-dimensional device simulator results. The model calculates the drain current and the channel conductance accurately for sub-100 nm devices with minimum number of model parameters.
Keywords :
MOSFET; electric admittance; semiconductor device models; surface potential; DIBL; channel conductance; channel length modulation; deep submicron MOSFET; device simulator; drain current; drift-diffusion equation; fully analytical charge sheet model; mobility variation; quantum charge-sheet approximation; quantum mechanical effect; short channel MOSFET; surface potential; velocity saturation; Analytical models; Circuit simulation; Electron devices; MOSFETs; Medical simulation; Poisson equations; Potential well; Quantum mechanics; Smoothing methods; Threshold voltage; Compact modeling; MOSFET; drain-current model; quantum mechanical effects; surface potential;
Conference_Titel :
Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-3831-0
Electronic_ISBN :
978-1-4244-3832-7
DOI :
10.1109/EDST.2009.5166102
