Title :
Study of random dopant fluctuation effects in fully depleted silicon on insulator MOSFET using analytical model
Author :
Rao, Rathnamala ; Katti, Guruprasad ; DasGupta, Nandita ; DasGupta, Amitava
Author_Institution :
Dept. of Electr. Eng., I.I.T. Madras, Chennai, India
Abstract :
The effect of random dopant fluctuation in the channel of a fully depleted SOI-MOSFET is investigated using analytical models for threshold voltage and subthreshold current. Analytical models are based on solving 2D Poisson´s equation considering non-uniformly doped channel. Since analytical models are faster compared to numerical simulations, a large number of devices can be simulated.
Keywords :
MOSFET; Poisson equation; semiconductor doping; silicon-on-insulator; 2D Poisson equation; MOSFET; analytical models; random dopant fluctuation; silicon on insulator; subthreshold current; threshold voltage; Analytical models; Doping; Fluctuations; MOSFET circuits; Numerical simulation; Resource description framework; Semiconductor process modeling; Silicon on insulator technology; Subthreshold current; Threshold voltage; Random dopant fluctuation (RDF); analytical model; fully depleted silicon on insulator (FD SOI) MOSFET.; non-uniform doping;
Conference_Titel :
Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-3831-0
Electronic_ISBN :
978-1-4244-3832-7
DOI :
10.1109/EDST.2009.5166108
