Retroreflection from disordered porous semiconductors

Author

Prislopski, Sergey ; Tiginyanu, I.M. ; Ghimpu, L. ; Monaico, E. ; Sirbu, L. ; Zhukovsky, Sergei V. ; Gaponenko, Sergey V.

Author_Institution

B. I. Stepanov Inst. of Phys., Nat. Acad. of Sci., Minsk, Belarus

fYear

2011

fDate

26-30 June 2011

Firstpage

1

Lastpage

4

Abstract

Prominent retroreflection is experimentally observed in disordered porous InP membranes. It is believed to be the result of an interplay between Fresnel-like and Bragg-like reflection for different components of an impinging wave vector, mediated by pronounced disorder and high material absorption. Retroreflection is seen to be stronger than Fresnel reflection and visible with the naked eye. The observed effect is broadband in wavelength, present in a wide range of incident angles, and (unique Fresnel reflection) largely polarization independent. It can be of use in a novel design of miniature retroreflecting optical components.

Keywords

Fresnel diffraction; optical elements; porous semiconductors; Fresnel reflection; disordered porous semiconductors; miniature retroreflecting optical components; retroreflection; Backscatter; Indium phosphide; Mirrors; Scattering; Surface waves; backscattering; disorder; microporous semiconductors; photonic nanostructures; retroreflection;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks (ICTON), 2011 13th International Conference on

Conference_Location

Stockholm

ISSN

2161-2056

Print_ISBN

978-1-4577-0881-7

Electronic_ISBN

2161-2056

Type

conf

DOI

10.1109/ICTON.2011.5970957

Filename

5970957