Title :
Physics based modeling of RF noise in SiGe HBTs
Author :
Kuma, K. ; Chakravorty, Anjan
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Madras, Chennai, India
Abstract :
Three different noise models are investigated from physical perspective using hydro-dynamic device simulation of 1D SiGe-HBT. An intuitive noise model formulation is proposed based on the 1st and 2nd order charge partitioning across base-emitter and base-collector regions. It is verified that proposed model improves the modeling of base current noise and correlation between the base and collector current noise sources.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; hydrodynamics; HBT; RF noise; SiGe; base current noise sources; base-collector regions; base-emitter regions; collector current noise sources; hydrodynamic device simulation; physics based modeling; Circuit noise; Germanium silicon alloys; Hafnium; High definition video; Numerical simulation; Physics; Radio frequency; Semiconductor device noise; Silicon carbide; Silicon germanium; Device Simulation; Hydrodynamic model; Noise Modeling; Shot Noise; SiGe-HBT;
Conference_Titel :
Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-3831-0
Electronic_ISBN :
978-1-4244-3832-7
DOI :
10.1109/EDST.2009.5166130
