Title :
Effect of light induced defects on the quantum efficiency of amorphous silicon Schottky barrier solar cell structures
Author :
Malone, C.T. ; Nicque, J.-L. ; Fonash, S.J. ; Wronski, C.R. ; Bennett, M.
Author_Institution :
Center for Electron. Mater. & Process., Pennsylvania State Univ., University Park, PA, USA
Abstract :
Changes in internal quantum efficiency (QE) of n-i-Pt Schottky barrier solar cells are directly correlated with light-induced defects in the bulk a-Si:H. These short-circuit QEs measured on cells 0.84 to 3.4 μm thick in the annealed state and after open-circuit degradation up to 650 h with 100 mW/cm2 ENH white light were analyzed using a detailed numerical model to obtain the corresponding densities of mid-gap states and capture cross sections. The self-consistent results obtained for the different thickness cell structures correlated light-induced, metastable defect creation with the degradation of the short-circuit currents
Keywords :
Schottky effect; amorphous semiconductors; crystal defects; elemental semiconductors; silicon; solar cells; 0.84 to 3.4 micron; Schottky barrier; amorphous Si solar cells; capture cross sections; internal quantum efficiency; light-induced defects; light-induced metastable defect creation; mid-gap states; open-circuit degradation; semiconductor; short circuits; Amorphous silicon; Circuits; Degradation; Lighting; Optical films; Photovoltaic cells; Quantum computing; Schottky barriers; Time measurement; Tin;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169404
