Title :
New aspects on analyzing ZVS conditions for converters using super-junction Si and wide bandgap SiC and GaN power FETs
Author :
Miftakhutdinov, Rais
Author_Institution :
Texas Instrum. Inc., Cary, NC, USA
Abstract :
Paper analyzes substantial Coss behavior differences of FETs using super-junction Si, SiC and GaN technologies versus traditional Si process and suggests new practical models for power losses optimization. These models applied to derive normalized ZVS conditions and boundaries for popular PWM ZVS topologies allowing efficiency optimization at wide operating conditions.
Keywords :
III-V semiconductors; elemental semiconductors; gallium compounds; optimisation; power field effect transistors; silicon; silicon compounds; wide band gap semiconductors; zero voltage switching; GaN; GaN power FET; PWM ZVS topology; Si; SiC; ZVS conditions; power losses optimization; substantial Coss behavior; super-junction Si; wide bandgap SiC; Equations; Field effect transistors; Gallium nitride; Silicon; Silicon carbide; Switches; Zero voltage switching; Gallium Nitride (GaN); MOSFET; Silicon Carbide (SiC); Soft Switching; Super Junction Devices; ZVS Converters;
Conference_Titel :
Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on
Conference_Location :
Lappeenranta
DOI :
10.1109/EPE.2014.6911047
