Title :
Noise modeling in quantum IR photodetectors
Author_Institution :
Phys. Dept., Politecnico di Torino
Abstract :
The limits of validity of the g-r approach addressing a few specific features of the quantum photodetector noise are discussed. To describe the photodetection process in quantum well infrared photodetectors, the standard model valid for homogeneous semiconductors including the simple generation-recombination noise mechanisms, have been adopted relying on charge relaxation dynamics occurring via a simple exponential process
Keywords :
infrared detectors; photodetectors; quantum well devices; semiconductor device models; semiconductor device noise; charge relaxation dynamics; g-r approach; generation-recombination noise; noise modeling; quantum IR photodetectors; Character generation; Charge carriers; Electron emission; Equations; Fluctuations; Low-frequency noise; Optical noise; Photodetectors; Quantum dots; Semiconductor device noise;
Conference_Titel :
LEOS Summer Topical Meetings, 2006 Digest of the
Conference_Location :
Quebec City, Que.
Print_ISBN :
1-4244-0090-2
DOI :
10.1109/LEOSST.2006.1694048
