A compact, fully differential D-band CMOS amplifier in 65nm CMOS

Author

Xu, Zhiwei ; Gu, Qun Jane ; Ku, Ining ; Chang, Mau-Chung Frank

Author_Institution

HRL Labs., Malibu, CA, USA

fYear

2010

fDate

8-10 Nov. 2010

Firstpage

1

Lastpage

4

Abstract

A fully differential 144GHz CMOS amplifier has been demonstrated in 65nm CMOS. It validates a maximum 20dB power gain and has positive gain over 38GHz frequency range from 126GHz to 164GHz. With stacking circuit architecture, the amplifier can tolerate up to 2V supply without reliability concern. It also delivers over 5.7dBm saturated output power with PldB of 5dBm under a 2V supply. The amplifier features a 3-stage common-source cascode architecture with on-chip interstage matching. The chip occupies 0.05 mm² area and draws 39mA and 51mA from 1.4V and 2V supplies respectively. To our best knowledge, this amplifier achieves the highest power gain for CMOS amplifier beyond 100GHz and paves the way for D-band radar and passive imaging system applications.

Keywords

CMOS integrated circuits; differential amplifiers; radar imaging; 3-stage common-source cascode architecture; current 39 mA; current 51 mA; differential D-band CMOS amplifier; frequency 126 GHz to 164 GHz; frequency 144 GHz; gain 20 dB; on-chip interstage matching; passive imaging system; radar imaging system; size 65 nm; stacking circuit architecture; voltage 2 V; CMOS integrated circuits; CMOS technology; Capacitors; Couplings; Gain; Logic gates; Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Circuits Conference (A-SSCC), 2010 IEEE Asian

Conference_Location

Beijing

Print_ISBN

978-1-4244-8300-6

Type

conf

DOI

10.1109/ASSCC.2010.5716614

Filename

5716614