Photomagnetic Effect and Photoconductivity in Magnetic Field in Ag-Doped MBE p-HgCdTe

Author

Protasov, Dmitry D. ; Kostuchenko, Vladimir Ya ; Krylov, Vladimir S. ; Ovsyuk, Victor N.

Author_Institution

Inst. of Semicond. Phys., Russian Acad. of Sci., Novosibirsk

fYear

2006

fDate

1-5 July 2006

Firstpage

44

Lastpage

47

Abstract

The influence of Ag-doping on photomagnetic effect and photoconductivity in magnetic field in p-HgCdTe was investigated. Photoconductivity was measured in Faraday and Foight geometries. Such recombination parameters as lifetime, mobility of minor carriers and velocities of surface recombination are determined from this measurements using least-square fitting. Using temperature dependencies of carriers lifetime, the decrease of density of recombination centers up to two order in an investigated sample after silver doping was revealed

Keywords

cadmium compounds; carrier lifetime; least squares approximations; magnetic fields; mercury compounds; minority carriers; molecular beam epitaxial growth; photoconductivity; photomagnetic effect; surface recombination; Ag-doped MBE; Faraday geometries; Foight geometries; HgCdTe-Ag; least-square fitting; magnetic field; minor carriers; photoconductivity; photomagnetic effect; recombination parameters; silver doping; surface recombination; temperature dependencies; Charge carrier lifetime; Doping; Geometry; Magnetic field measurement; Magnetooptic effects; Photoconductivity; Silver; Surface fitting; Temperature dependence; Velocity measurement; Cadmium-mercury telluride; lifetime; photoconductivity; photomagnetic effect; traps;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2006. Proceedings. 7th Annual 2006 International Workshop and Tutorials on

Conference_Location

Erlagol, Altai

ISSN

1815-3712

Print_ISBN

5-7782-0646-1

Type

conf

DOI

10.1109/SIBEDM.2006.230304

Filename

1694070