Title :
Efficiency improvement in a-Si and a-SiGe solar cells using a super chamber method
Author :
Wakisaka, K. ; Haku, H. ; Taguchi, M. ; Sayama, K. ; Tsuge, S. ; Dohjoh, H. ; Hishikawa, Y. ; Isomura, M. ; Nakamura, N. ; Tsuda, S. ; Nakano, S. ; Kishi, Y. ; Kuwano, Y.
Author_Institution :
Sanyo Electric Co. Ltd., Osaka, Japan
Abstract :
A total area conversion efficiency of 11.1% was achieved for a 10×10 cm2 integrated-type a-Si solar cell submodule. Approaches to improving conversion efficiency included the development of new materials, new fabrication methods, and a new device structure, specifically, the super chamber method, trimethylboron (B(CH3)3) p a-SiC:H, highly-textured TCO, an ultra-thin interface layer, and low-damage laser patterning process. New approaches to preparing a-Si:H and a-SiGe:H films are proposed. High-quality, wide-bandgap a-Si:H films have been fabricated at low substrate temperature by diluting silane with hydrogen. High-quality a-SiGe:H were fabricated using the super chamber method
Keywords :
Ge-Si alloys; amorphous semiconductors; elemental semiconductors; semiconductor materials; silicon; solar cells; vacuum deposited coatings; 11 percent; amorphous Si solar cells; amorphous SiGe solar cells; device structure; efficiency improvement; fabrication methods; low-damage laser patterning process; semiconductor; super chamber method; ultra-thin interface layer; Amorphous silicon; Buffer layers; Hydrogen; Laser ablation; Optical device fabrication; Optical materials; Photovoltaic cells; Raw materials; Semiconductor films; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169409
