Analysis and design of novel photonic active devices based on dilute nitrides

In this paper we propose the analysis of nonlinear phenomena in active GaInNAs-GaInAs waveguiding Photonic Band Gap structures. The PBG waveguide exploits a one-dimensional photonic crystal, the periodicity of which is perturbed by an active defective region. The gain spectrum is analysed as a function of the geometrical, electrical and optical parameters to point out the design criteria for the realization of optimized devices. The nonlinear property induced by the saturation of the optical gain of GaInNAs-GaInAs alloy semiconductors is investigated for the design of all-optical switches.