Preparation and electrical characterization of SiGe nanostructures

This paper presents the preparation and investigation of structure and electrical properties of nanostructures consisting of Si_1-xGe_x nanocrystals. Nanostructures were prepared by RF magnetron sputtering, followed by thermal annealing. X-ray diffraction, TEM, high resolution TEM and SAED measurements were performed. Current-voltage and current-temperature characteristics were taken. Nanostructures have different electrical behavior. Current-voltage curves are linear, while current-temperature curves are dependent on the annealing temperature. In films annealed at 650°C, electrical transport is controlled by quantum confinement effect and localized states (current-temperature characteristics), while in films annealed at 900°C it is controlled by tunneling of thermally activated carriers between neighboring nanocrystals.