Title :
Strained-Silicon as New High-Speed Technology
Author :
Shapin, Alexey G. ; Kalinin, Sergey V.
Author_Institution :
Siberian State Univ. of Telecommun. & Informatics, Novosibirsk
Abstract :
In the report we consider the basic prospects of development of strained-silicon technology in a communication facility, designs and principle of action MOSFET and the better hetero bipolar transistor (HBT) for wireless integrated circuit (IC), which working on frequencies of exceeding 350 GHz, analyze and compare performance data of HBT with GaAs and SiGe
Keywords :
Ge-Si alloys; III-V semiconductors; MOSFET; elemental semiconductors; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; integrated circuit design; silicon; 350 GHz; GaAs; HBT; MOSFET; SiGe; communication facility; hetero bipolar transistor; high-speed technology; strained-silicon; wireless integrated circuit; Bipolar integrated circuits; Bipolar transistors; Communications technology; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit technology; MOSFET circuits; Performance analysis; Silicon;
Conference_Titel :
Electron Devices and Materials, 2006. Proceedings. 7th Annual 2006 International Workshop and Tutorials on
Conference_Location :
Erlagol, Altai
Print_ISBN :
5-7782-0646-1
DOI :
10.1109/SIBEDM.2006.231994
