Influence of interfacial structure on electrical properties of metal/Ge Schottky contacts

Author

Nakatsuka, Osamu ; Akimoto, Shingo ; Nishimura, Tsuyoshi ; Zaima, Shigeaki

Author_Institution

Dept. of Crystalline Mater. Sci., Nagoya Univ., Chikusa, Japan

fYear

2009

fDate

11-12 June 2009

Firstpage

40

Lastpage

41

Abstract

This paper investigated the influence of the interfacial structure on electrical properties of metal/n-Ge Schottky contacts. The native oxide on Ge surface is not the origin of Fermi level pinning (FLP) and the interfacial reaction between metal and Ge probably caused FLP. The introduction of Si inter layer was not effective to resolve the FLP of metal/Ge contacts. It is important to investigate the reaction and the crystalline structure at metal/Ge interfaces with atomic scale in detail to understand the FLP in the future.

Keywords

Schottky barriers; electric properties; elemental semiconductors; germanium; interface structure; semiconductor-metal boundaries; Ge; crystalline structure; electrical properties; interfacial structure; metal-n-Ge Schottky contacts; Chemicals; Contacts; Electrons; Erbium; MOSFET circuits; Schottky barriers; Substrates; Surface cleaning; Temperature measurement; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2009. IWJT 2009. International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4244-3319-3

Electronic_ISBN

978-1-4244-3320-9

Type

conf

DOI

10.1109/IWJT.2009.5166215

Filename

5166215