Title :
Device quality amorphous silicon alloy materials
Author :
Lin, Guang H. ; He, Mu Zhi ; Bockris, John O M
Author_Institution :
Dept. of Chem., Texas A&M Univ., College Station, TX, USA
Abstract :
Device-quality hydrogenated amorphous silicon selenium and amorphous silicon sulfur alloys were prepared by plasma-enhanced chemical vapor deposition with hydrogen dilution. The flow rate ratio of hydrogen to silane was about 8:1. The optical and electrical properties and the structural defect of the alloy films were investigated. The results showed that the film quality deposited in a hydrogen-rich environment was greatly improved compared to that of alloys prepared without hydrogen dilution. The presence of hydrogen in the RF discharge plasma may sputter off the weaker bonding of film precursor, lead to a dense network, and consequently improve the film quality
Keywords :
CVD coatings; amorphous semiconductors; elemental semiconductors; hydrogen; selenium alloys; silicon; silicon alloys; solar cells; sulphur; RF discharge plasma; alloy films; amorphous Si:S,H solar cells; amorphous SiSe:H solar cells; device quality semiconductor materials; electrical properties; film precursor; optical properties; plasma-enhanced chemical vapor deposition; structural defect; Amorphous silicon; Chemical vapor deposition; Hydrogen; Optical films; Optical materials; Plasma chemistry; Plasma devices; Plasma materials processing; Plasma properties; Silicon alloys;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169420
