DocumentCode :
256226
Title :
The effects of the touch voltage and hydrostatic pressure on the optical absorption of Delta-MIGFET transistor
Author :
Oubram, Outmane ; Cisneros-Villalobos, Luis ; Limon-Mendoza, Mario ; Aquino Roblero, Francisco ; Tecpoyotl Torres, Margarita ; Abatal, M.
Author_Institution :
Fac. de Cienc. Quimicas e Ingenierias, Univ. Autonoma del Estado de Morelos, Cuernavaca, Mexico
fYear :
2014
fDate :
14-16 April 2014
Firstpage :
1426
Lastpage :
1429
Abstract :
The combined effects of hydrostatic pressure and voltage contact on subband structure and optical transitions in GaAs delta-MIGFET (Delta-Multiple Independent Gate Field Effect Transistor) have been theoretically studied. Results obtained show the optical absorption is quite sensitive to the applied hydrostatic pressure and contact voltage. These can be suitable for good optical performance and various infrared optical device applications and can be easily obtained by tuning the voltage contact and hydrostatic pressure strength.
Keywords :
III-V semiconductors; MOSFET; absorption coefficients; gallium arsenide; hydrostatics; GaAs; delta-MIGFET; delta-multiple independent gate field effect transistor; hydrostatic pressure strength; intersubband optical absorption; optical transitions; subband structure; touch voltage; voltage contact; Doping; Gallium arsenide; Logic gates; Presses; Transistors; Intersubband optical absorption; contact voltage; delta-MIGFET transistor; hydrostatic pressure; quantum well;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Multimedia Computing and Systems (ICMCS), 2014 International Conference on
Conference_Location :
Marrakech
Print_ISBN :
978-1-4799-3823-0
Type :
conf
DOI :
10.1109/ICMCS.2014.6911220
Filename :
6911220
Link To Document :
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