The effects of the touch voltage and hydrostatic pressure on the optical absorption of Delta-MIGFET transistor

Author

Oubram, Outmane ; Cisneros-Villalobos, Luis ; Limon-Mendoza, Mario ; Aquino Roblero, Francisco ; Tecpoyotl Torres, Margarita ; Abatal, M.

Author_Institution

Fac. de Cienc. Quimicas e Ingenierias, Univ. Autonoma del Estado de Morelos, Cuernavaca, Mexico

fYear

2014

fDate

14-16 April 2014

Firstpage

1426

Lastpage

1429

Abstract

The combined effects of hydrostatic pressure and voltage contact on subband structure and optical transitions in GaAs delta-MIGFET (Delta-Multiple Independent Gate Field Effect Transistor) have been theoretically studied. Results obtained show the optical absorption is quite sensitive to the applied hydrostatic pressure and contact voltage. These can be suitable for good optical performance and various infrared optical device applications and can be easily obtained by tuning the voltage contact and hydrostatic pressure strength.

Keywords

III-V semiconductors; MOSFET; absorption coefficients; gallium arsenide; hydrostatics; GaAs; delta-MIGFET; delta-multiple independent gate field effect transistor; hydrostatic pressure strength; intersubband optical absorption; optical transitions; subband structure; touch voltage; voltage contact; Doping; Gallium arsenide; Logic gates; Presses; Transistors; Intersubband optical absorption; contact voltage; delta-MIGFET transistor; hydrostatic pressure; quantum well;

fLanguage

English

Publisher

ieee

Conference_Titel

Multimedia Computing and Systems (ICMCS), 2014 International Conference on

Conference_Location

Marrakech

Print_ISBN

978-1-4799-3823-0

Type

conf

DOI

10.1109/ICMCS.2014.6911220

Filename

6911220