Title :
Radiation and temperature effects in heteroepitaxial and homoepitaxial InP cells
Author :
Weinberg, I. ; Curtis, H.B. ; Swartz, C.K. ; Brinker, D.J. ; Jenkins, P.P. ; Faur, M.
Author_Institution :
NASA Lewis Res. Center, Cleveland, OH, USA
Abstract :
Heteroepitaxial (InP/GaAs) and homoepitaxial (InP/InP) solar cells were irradiated by 1 MeV electrons and their performance, temperature dependencies and carrier removal rates determined. The radiation resistances of the InP/GaAs cells were significantly higher than that of the InP/InP cells. This was attributed to the high dislocation density present in the heteroepitaxial cells. In addition, the effects of dislocations in these latter cells were dominant in determining the temperature dependence of the open-circuit voltage
Keywords :
III-V semiconductors; indium compounds; radiation effects; semiconductor device testing; solar cells; thermal analysis; 1 MeV; InP-GaAs; InP-InP; carrier removal rates; dislocation density; heteroepitaxial; homoepitaxial; open-circuit voltage; performance; radiation effects; radiation resistances; semiconductor device testing; solar cells; temperature effects; Degradation; Density measurement; Electrons; Etching; Gallium arsenide; Indium phosphide; Protons; Substrates; Temperature dependence; Xenon;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169444
