• DocumentCode
    2562802
  • Title

    Recent technology advances in large area, lightweight GaAs/Ge solar cells

  • Author

    Chu, C. ; Iles, P. ; Yoo, H. ; Reed, B. ; Krogen, J.

  • Author_Institution
    Applied Solar Energy Corp., City of Industry, CA, USA
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    1512
  • Abstract
    Advances in the technology for producing large-area, thin gallium arsenide solar cells on germanium substrates are described. Most of the discussion is of cells around 90 μm thick with areas 16 to 36 cm2. Processing aspects are discussed. The best cells made are described, showing the possibility of further improved performance in production. These cells have been successfully incorporated into lightweight panels, and both cells and panels have passed space qualification tests
  • Keywords
    III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; semiconductor thin films; solar cells; 90 micron; GaAs-Ge solar cells; Ge; lightweight solar cells; thin films; Biomembranes; Contacts; Dry etching; Gallium arsenide; MOCVD; Photovoltaic cells; Protection; Solar power generation; Surface finishing; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169456
  • Filename
    169456
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2562802