Measurements of the quantized Hall resistance at the ETL

Author

Kinoshita, J. ; Nishinaka, H. ; Segawa, K. ; Van Degrift, C.T. ; Endo, T.

Author_Institution

Electrotech. Lab., Ibaraki, Japan

fYear

1990

fDate

11-14 June 1990

Firstpage

346

Lastpage

347

Abstract

The quantized Hall resistance R/sub H/(4) of Si-MOSFETs has been measured in terms of Omega /sub ETL/ by the use of a recently constructed measurement system at the Electrotechnical Laboratory, Japan. The time variation of the 1- Omega /sub ETL/ resistance standard relative to the QHR is traced. A potentiometric method is used to compare R/sub H/(4) with a reference resistor of nominal value 6453.2- Omega . A cryogenic current comparator system is used to link the 6453.2- Omega resistor to Omega /sub ETL/. The estimated overall uncertainty is 5*10/sup -8/. The experimental equipment and procedure are described in detail.<>

Keywords

comparators (circuits); electric resistance measurement; elemental semiconductors; insulated gate field effect transistors; measurement standards; potentiometers; quantum Hall effect; silicon; 1 ohm; 6453.2 ohm; ETL; Electrotechnical Laboratory; Japan; Si; cryogenic current comparator; potentiometric method; quantized Hall resistance; resistance bridge; resistance standard; time variation; uncertainty; Contact resistance; Electric resistance; Electrical resistance measurement; Electrodes; Electronic equipment testing; Electrons; Laboratories; Petroleum; Quantum mechanics; Resistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements, 1990. CPEM '90 Digest., Conference on

Conference_Location

Ottawa, Ontario, Canada

Type

conf

DOI

10.1109/CPEM.1990.110053

Filename

110053