DocumentCode
2563630
Title
Operation of multi-level phase change memory using various programming techniques
Author
Lin, Jun-Tin ; Liao, Yi-Bo ; Chiang, Meng-Hsueh ; Hsu, Wei-Chou
Author_Institution
Dept. of Electron. Eng., Nat. Ilan Univ., Ilan, Taiwan
fYear
2009
fDate
18-20 May 2009
Firstpage
199
Lastpage
202
Abstract
In this paper, we evaluate the writing operation of multi-level phase change memory by using different programming techniques including proposed monotonically increasing and decreasing pulse, constant pulse, and slow quenching schemes. Our simulation results suggest that the proposed multi-level cell schemes not only have an advantage in density but also consume less power during writing operation.
Keywords
phase change memories; programming; constant pulse; decreasing pulse; increasing pulse; multilevel cell scheme; multilevel phase change memory; programming techniques; slow quenching scheme; writing operation; Amorphous materials; Crystallization; Heating; Logic; Nonvolatile memory; Phase change materials; Phase change memory; Space vector pulse width modulation; Temperature; Writing; Phase change memory (PCM); multi-level cell (MLC);
fLanguage
English
Publisher
ieee
Conference_Titel
IC Design and Technology, 2009. ICICDT '09. IEEE International Conference on
Conference_Location
Austin, TX
Print_ISBN
978-1-4244-2933-2
Electronic_ISBN
978-1-4244-2934-9
Type
conf
DOI
10.1109/ICICDT.2009.5166295
Filename
5166295
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