Evanescent wave coupling in hybrid III–V/SOI nanolaser

Author

Bazin, A. ; Halioua, Y. ; Karle, T. ; Monnier, P. ; Roelkens, G. ; Sagnes, I. ; Raj, R. ; Raineri, F.

Author_Institution

Lab. de Photonique et de Nanostruct., CNRS, Marcoussis, France

fYear

2011

fDate

26-30 June 2011

Firstpage

1

Lastpage

3

Abstract

Heterogeneous integration of III-V semiconductor compounds on SOI is one of the key technologies for next generation on chip optical interconnects. The use of photonic crystals nanolasers, within this context, represents a disruptive solution in terms of footprint, activation energy and ultrafast response. In this work, we study the evanescent wave coupling occurring between the nanolasers and a subjacent Si wire and demonstrate that more than 90% of the light is funneled into the Si circuitry.

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; integrated optics; nanophotonics; photonic crystals; quantum well lasers; silicon-on-insulator; III-V semiconductor compounds; InGaAsP-InGaAs; SOI nanolaser; Si-SiO₂; evanescent wave coupling; heterogeneous integrated system; nanocavity; on-chip optical interconnects; photonic crystals nanolasers; quantum wells; ultrafast optical response; wire waveguide; Cavity resonators; Couplings; Laser excitation; Optical waveguides; Silicon on insulator technology; Waveguide lasers; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks (ICTON), 2011 13th International Conference on

Conference_Location

Stockholm

ISSN

2161-2056

Print_ISBN

978-1-4577-0881-7

Electronic_ISBN

2161-2056

Type

conf

DOI

10.1109/ICTON.2011.5971135

Filename

5971135