DocumentCode :
2563866
Title :
Charging and discharging phenomena in simulated space environment
Author :
Hikita, Masayuki ; Cho, Mengu
Author_Institution :
Kyushu Inst. of Technol., Kitakyushu, Japan
Volume :
2
fYear :
2000
fDate :
2000
Firstpage :
693
Abstract :
Large space platform needs to be operated at high voltage. When a solar array has a negative voltage more than 200 V with respect to the plasma, arcing occurs. Experiments are carried out in order to elucidate charging and discharging phenomena on a solar array in simulated space environment and find mitigation techniques against arcing. Arcing occurs at the triple junction, where solar cell coverglass, insulator, interconnector and conductor meet, because of the field enhancement. Once an arc occurs, the current is supplied through the plasma by the charge stored on the insulator surface nearby. It is found that transparent film placed in front of the solar array is effective to suppress the arcing onset and the arc current, because the film acts as the shield to prevent ions from charging the coverglass and the arc currents from flowing through the plasma
Keywords :
arcs (electric); solar cell arrays; space vehicle power plants; surface charging; vacuum arcs; arc current suppression; arcing mitigation; arcing onset suppression; charging phenomena; conductor; discharging phenomena; field enhancement; high voltage operation; insulator; insulator surface charge; interconnector,; large space platform; plasma; simulated space environment; solar array; solar cell coverglass; transparent film; triple junction; Conductors; Extraterrestrial phenomena; Fault location; Insulation; Photovoltaic cells; Plasma density; Plasma simulation; Space charge; Space technology; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Discharges and Electrical Insulation in Vacuum, 2000. Proceedings. ISDEIV. XIXth International Symposium on
Conference_Location :
Xi´an
Print_ISBN :
0-7803-5791-4
Type :
conf
DOI :
10.1109/DEIV.2000.879084
Filename :
879084
Link To Document :
بازگشت