Silicon bipolar fixed and variable gain amplifier MMICs for microwave and lightwave applications up to 6 GHz

Author

Kipnis, I. ; Kukielka, J.F. ; Wholey, J. ; Snapp, C.P.

Author_Institution

Avantek Inc., Newark, CA, USA

fYear

1989

fDate

13-15 June 1989

Firstpage

109

Abstract

A variety of fixed and variable gain amplifier MMICs (monolithic microwave integrated circuits) for applications up to 6 GHz are presented. The circuits are fabricated using an f/sub T/=10 GHz, f/sub max/=20 GHz, nonpolysilicon-emitter silicon bipolar process. Three amplifier topologies and their performance are reported: a fixed-gain wideband amplifier, a high-gain low-noise amplifier than can also be effectively used as a transimpedance amplifier, and a variable gain amplifier. These MMICs illustrate the capability of silicon bipolar technology to offer cost-effective solutions for microwave applications up to 6 GHz and for digital lightwave applications up to 5 Gb/s.<>

Keywords

MMIC; bipolar integrated circuits; elemental semiconductors; microwave amplifiers; wideband amplifiers; digital lightwave; fixed gain; lightwave applications; low-noise amplifier; nonpolysilicon-emitter silicon bipolar process; transimpedance amplifier; variable gain amplifier MMICs; wideband amplifier; Application specific integrated circuits; Broadband amplifiers; Circuit topology; Gain; Low-noise amplifiers; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38681

Filename

38681