Ka-band monolithic broadband LNA modules

A set of broadband monolithic GaAs metal-semiconductor field-effect transistor (MESFET) low-noise amplifiers (LNAs) has been developed. These Ka-band amplifiers make use of state-of-the-art sub-0.25- mu m MESFET devices. Typical performance for a single-stage LNA using a 75- mu m device is about 5 dB of gain with an average noise figure of 4.5 dB across the 26.5 to 40 GHz band. A two-stage monolithic chip has 10 dB of gain with an average noise figure of 6 dB across the Ka-band.<>