Title :
Efficient large-signal FET parameter extraction using harmonics
Author :
Bandler, J.W. ; Zhang, Q.J. ; Ye, S. ; Chen, S.H.
Author_Institution :
Optimization Syst. Assoc. Inc., Dundas, Ont., Canada
Abstract :
The authors present a novel approach to large-signal nonlinear parameter extraction of GaAs metal-semiconductor field-effect transistor (MESFET) devices measured under harmonic conditions. Powerful nonlinear adjoint-based optimization simultaneously processes multibias, multi-power-input, multi-fundamental-frequency excitations and multiharmonic measurements to reveal the parameters of the intrinsic FET. One test successfully processed 111 error functions of 20 model parameters. The technique was implemented in a program called HarPE (harmonic balance driven model parameter extractor).<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electronic engineering computing; gallium arsenide; semiconductor device models; GaAs; HarPE; MESFET; error functions; harmonic balance driven model parameter extractor; harmonics; large-signal FET parameter extraction; multi-fundamental-frequency excitations; multi-power-input; multibias; multiharmonic measurements; nonlinear adjoint-based optimization; nonlinear parameter extraction; Circuits; Computational modeling; Data mining; Gallium arsenide; MESFETs; Microwave FETs; Parameter extraction; Power measurement; Power system harmonics; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38793
