Title :
Notch filters with variable center frequency and attenuation
Author_Institution :
Osaka Inst. of Technol., Japan
Abstract :
The author describes notch filters whose center frequencies and maximum attenuation are variable. Three different types of such filters using varactor diodes and GaAs field-effect transistors (FETs) are proposed and tested at 2-4 GHz. The tunability over 2.2-4.0 GHz is obtained by changing the junction capacitances of the varactor diodes, and a maximum attenuation over 15-60 dB is obtained by changing the inner resistances of the FETs.<>
Keywords :
microwave filters; notch filters; solid-state microwave circuits; varactors; 2 to 4 GHz; GaAs; field-effect transistors; inner resistances; junction capacitances; maximum attenuation; tunability; varactor diodes; variable center frequency; Attenuation; Capacitance; Diodes; Equivalent circuits; FETs; Frequency; Microwave filters; RLC circuits; Resonance; Varactors;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38797
