Channel temperature estimation of AlGaN/GaN HEMT for pulsed RADAR applications using infrared thermography and electrical characterization

Author

Fonder, Jean-Baptiste ; Latry, Olivier ; Temcamani, Farid ; Duperrier, Cedric

Author_Institution

GPM, Rouen Univ., St. Etienne du Rouvray, France

fYear

2014

fDate

14-16 April 2014

Firstpage

1405

Lastpage

1408

Abstract

This paper presents measurement of AlGaN/GaN HEMT temperature with two techniques. Coupling of infrared thermography and electrical characterization of drain current shows good agreement of both techniques. They are complementary and may allow spatial cartography of HEMT channel temperature. By applying these methods to life test and coupling it to physical investigations, we demonstrate that degradations in aged transistors are mainly related to channel temperature.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; infrared imaging; life testing; radar; thermal management (packaging); wide band gap semiconductors; AlGaN-GaN; HEMT temperature; channel temperature estimation; drain current; electrical characterization; infrared thermography; life test; pulsed radar applications; spatial cartography; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; Radio frequency; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Multimedia Computing and Systems (ICMCS), 2014 International Conference on

Conference_Location

Marrakech

Print_ISBN

978-1-4799-3823-0

Type

conf

DOI

10.1109/ICMCS.2014.6911421

Filename

6911421