DocumentCode :
2567025
Title :
On a nonvolatile memory cell based on micro-electro-mechanics
Author :
Hälg, B.
Author_Institution :
Landis & Gyr Betriebs AG, Zug, Switzerland
fYear :
1990
fDate :
11-14 Feb 1990
Firstpage :
172
Lastpage :
176
Abstract :
An integrated micro-electro-mechanical nonvolatile memory cell is investigated. It essentially consists of a surface-micromachined bridge that is longitudinally stressed so that it buckled and becomes mechanically bistable. This bistable bridge performs the memory function. The read and write operation is performed by sensing the capacitance of the bridge and by electrostatically switching the bridge from one stable state into the other, respectively. The performance of such a device has been roughly estimated by a simple analytical model and experimental samples have been fabricated using a slightly adapted MOS process. The results appear promising
Keywords :
capacitance; cellular arrays; metal-insulator-semiconductor devices; bistable bridge; capacitance; electrostatically switching; longitudinally stressed; mechanically bistable; memory function; micro-electro-mechanics; nonvolatile memory cell; slightly adapted MOS process; surface-micromachined bridge; Batteries; Books; Bridge circuits; Capacitance; Capacitive sensors; Compressive stress; Nonvolatile memory; Performance analysis; Random access memory; Read-write memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 1990. Proceedings, An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots. IEEE
Conference_Location :
Napa Valley, CA
Type :
conf
DOI :
10.1109/MEMSYS.1990.110271
Filename :
110271
Link To Document :
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