Title :
Signal-Margin-Screening for Multi-Mb MRAM
Author :
Honigschmid, H. ; Beer, P. ; Bette, A. ; Dittrich, R. ; Gardic, R. ; Gogl, D. ; Lammers, S. ; Schmid, J. ; Altimime, L. ; Bournat, S. ; Muller, Gunter
Author_Institution :
Infineon, Munich
Abstract :
As MRAM technology is maturing, the need for developing a strategy to identify and replace marginal bits during read/write operation becomes necessary. The methodology and circuit techniques for read/write signal-margin screening implemented in a 0.18mum 16Mb MRAM design, are described. The methodology leads to increased read/write signal margins resulting in fully functional dice by applying a wafer-level screen test including half select disturb pattern
Keywords :
integrated circuit design; magnetoresistive devices; random-access storage; 0.18 micron; MRAM; half select disturb pattern; signal margin screening; wafer level screen test; Calibration; Circuits; Clamps; Diodes; Magnetoresistance; Mirrors; Random access memory; Read-write memory; Switches; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0079-1
DOI :
10.1109/ISSCC.2006.1696079
