CMOS-on-Plastic Technology using Sequential Laterally Solidified Silicon Thin-Film Transistors

Author

Kane, M.G. ; Goodman, Louis ; van der Wilt, Paul C ; Limanov, A.V. ; Im, J.S.

fYear

2006

fDate

6-9 Feb. 2006

Firstpage

1092

Lastpage

1098

Abstract

CMOS circuits are directly fabricated on plastic substrates using a process with a maximum temperature of 300degC. NMOS transistors with 2mum channel lengths have unity-gain frequencies greater than 250MHz, and CMOS ring oscillators operate at 100MHz with a 15V supply

Keywords

CMOS digital integrated circuits; crystallisation; integrated circuit manufacture; integrated circuit technology; oscillators; silicon-on-insulator; thin film transistors; 100 MHz; 15 V; 2 micron; 250 MHz; 300 C; CMOS circuits; CMOS ring oscillators; CMOS-on-plastic technology; NMOS transistors; plastic substrates; silicon thin-film transistors; CMOS process; CMOS technology; Circuits; Frequency; MOSFETs; Plastics; Silicon; Substrates; Temperature; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International

Conference_Location

San Francisco, CA

ISSN

0193-6530

Print_ISBN

1-4244-0079-1

Type

conf

DOI

10.1109/ISSCC.2006.1696153

Filename

1696153

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2568596