Title :
A 5.4GHz 0.35/spl mu/m BiCMOS FBAR Resonator Oscillator in Above-IC Technology
Author :
Aissi, M. ; Tournier, E. ; Dubois, M.-A. ; Parat, Guy ; Plana, R.
Author_Institution :
LAAS-CNRS, Toulouse
Abstract :
A 5.4GHz 0.35mum BiCMOS SiGe FBAR oscillator is presented. The FBAR resonator is directly integrated above the silicon IC, thus eliminating the bond wires and associated parasitics of the classical FBAR oscillators. The oscillator achieves a phase noise of -117.7dBc/Hz at 100kHz offset from 5.46GHz carrier frequency while the oscillator core draws 1.7mA from 2.7V
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; acoustic resonators; oscillators; silicon; 0.35 micron; 1.7 mA; 100 kHz; 2.7 V; 5.4 GHz; 5.46 GHz; BiCMOS oscillator; SiGe; bond wires; carrier frequency; film bulk acoustic wave resonator; integrated circuit technology; parasitics; phase noise; silicon integrated circuit; BiCMOS integrated circuits; Capacitance; Capacitors; Film bulk acoustic resonators; Filters; Oscillators; Phase noise; Piezoelectric films; Radio frequency; Substrates;
Conference_Titel :
Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0079-1
DOI :
10.1109/ISSCC.2006.1696169
