Title :
A novel MOSFET-only current reference with multiple temperature compensations
Author :
Chang, Sheng ; Wang, Gaofeng ; Huang, Qijun
Author_Institution :
Wuhan Univ., Wuhan
Abstract :
A novel MOSFET-only current reference is introduced in this paper. In order to achieve temperature invariant, both a PTAT current and an inverse PTAT current are generated for zeroing the temperature effect. Three-level temperature compensations are realized to improve the performance. The circuit, designed for standard 0.35-um CMOS process and constructed only by MOSFETs, can operate in IV or even lower without requiring any special threshold voltage device. The temperature coefficient of this circuit can achieve as low as 16ppm/degC over the range from -10degC~100degC.
Keywords :
CMOS integrated circuits; MOSFET; compensation; CMOS process; MOSFET-only current reference; multiple temperature compensations; size 0.35 mum; temperature effect; threshold voltage device; Analog integrated circuits; CMOS process; Circuit simulation; Information technology; MOSFETs; Microelectronics; Resistors; Temperature dependence; Temperature distribution; Threshold voltage; CMOS; ZTC point; current reference; multiple temperature compensations;
Conference_Titel :
ASIC, 2007. ASICON '07. 7th International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4244-1132-0
Electronic_ISBN :
978-1-4244-1132-0
DOI :
10.1109/ICASIC.2007.4415678
