Title :
1/2-inch 7.2MPixel CMOS Image Sensor with 2.25/spl mu/m Pixels Using 4-Shared Pixel Structure for Pixel-Level Summation
Author :
Kim, Young Chan ; Kim, Yi Tae ; Choi, Sung Ho ; Kong, Hae Kyung ; Hwang, Sung In ; Ko, Ju Hyun ; Kim, Bum Suk ; Asaba, Tetsuo ; Lim, Su Hun ; Hahn, June Soo ; Im, Joon Hyuk ; Oh, Tae Seok ; Yi, Duk Min ; Lee, Jong Moon ; Yang, Woon Phil ; Ahn, Jung Chak ;
Author_Institution :
Samsung Electron., Kiheung
Abstract :
A 1/2-inch 7.2Mpixel CMOS image sensor with 2.25mum pixels employs a 4-shared pixel structure with pixel-level charge summation. It achieves a 57% fill factor, full well capacity of 14ke- with 41dB maximum SNR at full resolution, 8e-random noise, 15ke-/lux-s sensitivity, and a 3dB increment in SNR for pixel-level charge summation and sub-sampling operation. A 0.13mum Cu process is used
Keywords :
CMOS image sensors; copper; random noise; 0.13 micron; 2.25 micron; 4-shared pixel structure; 7.2 Mpixel; CMOS image sensor; Cu; Cu process; pixel-level charge summation; pixel-level summation; random noise; 1f noise; CMOS image sensors; Charge coupled devices; Computational Intelligence Society; Image quality; Photodiodes; Pixel; Signal to noise ratio; Timing; Transistors;
Conference_Titel :
Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0079-1
DOI :
10.1109/ISSCC.2006.1696258
