DocumentCode :
2571338
Title :
Compact model of surface potential in strong inversion channel
Author :
Yuehua, Dai ; Junning, Chen ; Daoming, Ke
Author_Institution :
Anhui Univ., Hefei
fYear :
2007
fDate :
22-25 Oct. 2007
Firstpage :
1062
Lastpage :
1065
Abstract :
In this work, the expression of surface potential corresponding to strong inversion state is presented which is distinct from the classical value 2VB due to quantum effect. Then threshold voltage is calculated and it is found that quantum effect affects seriously threshold voltage.
Keywords :
MOSFET; Schrodinger equation; quantum optics; surface potential; quantum effect; strong inversion channel; surface potential; threshold voltage; Dielectric constant; Doping; Electrons; Maxwell equations; Potential well; Schrodinger equation; Semiconductor process modeling; Silicon; Space charge; Threshold voltage; Compact model; Quantum effect; Surface potential; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC, 2007. ASICON '07. 7th International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4244-1132-0
Electronic_ISBN :
978-1-4244-1132-0
Type :
conf
DOI :
10.1109/ICASIC.2007.4415816
Filename :
4415816
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2571338
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