• DocumentCode
    2571338
  • Title

    Compact model of surface potential in strong inversion channel

  • Author

    Yuehua, Dai ; Junning, Chen ; Daoming, Ke

  • Author_Institution
    Anhui Univ., Hefei
  • fYear
    2007
  • fDate
    22-25 Oct. 2007
  • Firstpage
    1062
  • Lastpage
    1065
  • Abstract
    In this work, the expression of surface potential corresponding to strong inversion state is presented which is distinct from the classical value 2VB due to quantum effect. Then threshold voltage is calculated and it is found that quantum effect affects seriously threshold voltage.
  • Keywords
    MOSFET; Schrodinger equation; quantum optics; surface potential; quantum effect; strong inversion channel; surface potential; threshold voltage; Dielectric constant; Doping; Electrons; Maxwell equations; Potential well; Schrodinger equation; Semiconductor process modeling; Silicon; Space charge; Threshold voltage; Compact model; Quantum effect; Surface potential; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC, 2007. ASICON '07. 7th International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4244-1132-0
  • Electronic_ISBN
    978-1-4244-1132-0
  • Type

    conf

  • DOI
    10.1109/ICASIC.2007.4415816
  • Filename
    4415816
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2571338