Title :
On the high temperature operation of high voltage power devices
Author :
Obreja, Vasile V N ; Nuttall, Keith I.
Author_Institution :
Nat. R&D Inst. for Microtechnology, Bucharest, Romania
Abstract :
The surface component of reverse current is a serious limitation for the operation of high voltage/current devices at high junction temperature. This component may induce reverse current-voltage instability of a PN junction followed by device failure during high temperature operation. Experimental results are presented for silicon rectifier diodes, revealing the influence of the junction surface leakage current on the reverse I-V characteristics. Known results for silicon carbide PIN diodes are considered for comparison. Available PN junction passivation methods at this time are not effective enough in controlling the junction surface leakage current. Improved surface passivation techniques are required to achieve reliable device operation, especially above 200°C.
Keywords :
high-temperature electronics; leakage currents; p-i-n diodes; passivation; power semiconductor diodes; semiconductor device breakdown; semiconductor device measurement; semiconductor device reliability; solid-state rectifiers; thermal stability; 200 degC; PN junction passivation methods; PN junction reverse current-voltage instability; Si-SiO2; SiC; device reliability; high junction temperatures; high temperature operation device failure; high voltage power device high temperature operation; high voltage/current device operating limitations; junction surface leakage current; reverse I-V characteristics; reverse current surface component; silicon carbide PIN diodes; silicon rectifier diodes; surface passivation; Breakdown voltage; Dielectrics; Heat treatment; Low voltage; Passivation; Rubber; Schottky diodes; Silicon carbide; Silicon devices; Temperature;
Conference_Titel :
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN :
0-7803-7440-1
DOI :
10.1109/SMICND.2002.1105843
