Title :
Recombination properties of ZnIn2S4:Mn single crystals
Author :
Arama, E.D. ; Zhitar, V.F. ; Machuga, A.I. ; Shemyakova, T.D.
Author_Institution :
Inst. of Appl. Phys., Acad. of Sci. of the Republic of Moldova, Chisinau, Moldova
Abstract :
Recombination characteristics of single crystals of Mn-doped ZnIn2S4(III) three-layer polytypes have been investigated. The characteristic Features of cathodoluminescence (CL) have been found out. The CL spectra shift toward the long wavelength range is observed when the dopant concentration increases and temperature decreases till 80 K. The photoconductivity (PC) spectra shift to the high energy region and the PC type changes with the increasing of the dopant concentration. Doping with Mn increases the order of the crystal. A model for the interpretation of the experimental data is proposed.
Keywords :
cathodoluminescence; electron-hole recombination; indium compounds; manganese; photoconductivity; spectral line shift; ternary semiconductors; zinc compounds; 80 K; CL spectra shift; Mn-doped ZnIn2S4; PC type changes; ZnIn2S4:Mn; ZnIn2S4:Mn single crystals; cathodoluminescence; dopant concentration; high energy region; long wavelength range; order; photoconductivity spectra; recombination characteristics; single crystals; three-layer polytypes; Crystals; Luminescence; Optical filters; Photoconductivity; Physics; Radiative recombination; Semiconductor device doping; Semiconductor process modeling; Temperature distribution; Wideband;
Conference_Titel :
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN :
0-7803-7440-1
DOI :
10.1109/SMICND.2002.1105879
