Title :
A conductivity modulated high voltage polycrystalline silicon thin film transistor with improved on state and transient performance
Author :
Xu, Y.Z. ; Clough, F.J. ; Narayanan, E.M.S. ; Chen, Y. ; Milne, W.I.
Author_Institution :
Dept. of Electr. & Electron. Eng., De Montfort Univ., Leicester, UK
Abstract :
A novel high voltage polycrystalline silicon thin film transistor, with an improved on state and transient performance, is presented in this report. The key features of the new structure are the combination of a p/sup +/ drain and a semi-insulating field plate which connects the gate to the drain. Minority carrier injection from the p/sup +/ drain increases the on state current by a factor of 5 and reduces the ´turn on´ time by over 10%. The minority carrier injection effects decay over sub-microsecond time scales.
Keywords :
elemental semiconductors; minority carriers; power field effect transistors; silicon; thin film transistors; Si; conductivity modulation; high voltage polycrystalline silicon thin film transistor; minority carrier injection; on state current; p/sup +/ drain; polysilicon HVTFT; semi-insulating field plate; transient characteristics; turn on time; Circuit testing; Conductivity; Fabrication; Glass; Inverters; Plasma temperature; Probes; Silicon; Thin film transistors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746353
