Title :
In-situ barrier formation for high reliable W/barrier/poly-Si gate using denudation of WN/sub x/ on polycrystalline Si
Author :
Byung Hak Lee ; Dong Kyun Sohn ; Ji-Soo Park ; Chang Hee Han ; Yun-Jun Huh ; Jeong Soo Byun ; Jae Jeong Kim
Author_Institution :
R&D Div., LG Semicon Co. Ltd., Cheongju, South Korea
Abstract :
We found that rapid thermal annealing treatment of amorphous WN/sub x//poly-Si resulted in denudation of nitrogen atoms with formation of low resistivity W and high reliable in situ barrier layer, simultaneously. Furthermore, electrical properties of denuded-WN/sub x//poly-Si gate were superior to those of conventional W/WN/sub x//poly-Si gate after selective oxidation and post heat-treatment.
Keywords :
diffusion barriers; metallisation; oxidation; rapid thermal annealing; tungsten; tungsten compounds; W-WN-Si; W/barrier/poly-Si gate; amorphous WN/sub x/ denudation; electrical resistivity; heat treatment; in situ barrier formation; polycrystalline Si; rapid thermal annealing; selective oxidation; Amorphous materials; Atomic layer deposition; Conductivity; Nitrogen; Oxidation; Rapid thermal annealing; Rapid thermal processing; Silicides; Temperature; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746380
