Title :
Trench oxide isolated single crystal silicon micromachined accelerometer
Author :
Sridhar, U. ; Lau Choon How ; Liu Lian Jun ; Miao Yu Bo ; Tan Khen-Sang ; Foo Pang Dow ; Bergstrom, J. ; Sooriakumar, K. ; Loh Yong Hong ; Lee Han San ; Tan Chung Kiat
Author_Institution :
Inst. of Microelectron., Singapore
Abstract :
A novel surface micromachined accelerometer using single crystal silicon structures is described. Trench oxide isolation is used to fabricate electrically insulating anchors. Micro-accelerometer structures are fabricated using deep RIE on inexpensive silicon substrate. Excellent performance and high yield are achieved over the temperature range utilizing a separate ASIC for signal conditioning.
Keywords :
accelerometers; elemental semiconductors; isolation technology; micromachining; microsensors; silicon; sputter etching; ASIC; Si; deep RIE; electrically insulating anchors; micromachined accelerometer; signal conditioning; trench oxide isolation; yield; Accelerometers; Bonding; Crystalline materials; Electrodes; Etching; Fabrication; Large-scale systems; Manufacturing; Silicon; Temperature sensors;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746401
