Title :
Transferred-substrate HBTs with 250 GHz current-gain cutoff frequency
Author :
Mensa, D. ; Lee, Q. ; Guthrie, J. ; Jaganathan, S. ; Rodwell, M.J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We report improved current gain characteristics in the transferred-substrate HBTs, demonstrated by record current gain cutoff frequency f/sub r/ of 254 GHz. This work compares device results from three wafers and points out the relative importance of the factors affecting f/sub r/ and their impact on f/sub max/.
Keywords :
bipolar MIMIC; equivalent circuits; heterojunction bipolar transistors; integrated circuit technology; millimetre wave bipolar transistors; semiconductor device models; 254 GHz; EHF; current gain characteristics; current-gain cutoff frequency; fabrication; transferred-substrate HBTs; Bipolar transistors; Circuits; Cutoff frequency; Distributed amplifiers; Doping; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Performance gain; Photonic band gap;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746442
