SiGe fast-switching power diodes

Author

Brown, A.R. ; Hurkx, G.A.M. ; Huizing, H.G.A. ; Peter, M.S. ; de Boer, W.B. ; van Berkum, J.G.M. ; Zalm, P.C. ; Huang, E. ; Koper, N.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

699

Lastpage

702

Abstract

SiGe is widely used in high-frequency bipolar transistors because of its low bandgap and compatibility with silicon. Here we exploit the same benefits of SiGe in a new application area, namely ultrafast power rectifiers. We have produced discrete p/sup +/(SiGe)-n/sup -/n/sup ++/ diodes with low forward voltage drop, low stored charge, and a soft recovery. The performance far exceeds that of conventional devices. These improvements are achieved without resorting to lifetime killing and thus the devices can be easily integrated into power ICs.

Keywords

power semiconductor diodes; semiconductor materials; silicon compounds; solid-state rectifiers; SiGe; bandgap; fast-switching power diodes; forward voltage drop; power ICs; soft recovery; stored charge; ultrafast power rectifiers; Charge measurement; Current measurement; Germanium silicon alloys; Leakage current; Low voltage; Power integrated circuits; Schottky diodes; Semiconductor diodes; Silicon germanium; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746453

Filename

746453