DocumentCode :
2575055
Title :
Reduced gate leakage current and boron penetration of 0.18 /spl mu/m 1.5 V MOSFETs using integrated RTCVD oxynitride gate dielectric
Author :
Hsing-Huang Tseng ; O´Meara, D.L. ; Tobin, P.J. ; Wang, V.S. ; Xin Guo ; Hegde, R. ; Yang, I.Y. ; Gilbert, P. ; Cotton, R. ; Hebert, L.
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
fYear :
1998
fDate :
6-9 Dec. 1998
Firstpage :
793
Lastpage :
796
Abstract :
High gate leakage current and severe boron penetration are two major problems for ultra-thin gate oxide especially for portable applications where chip standby power must be minimized. We report for the first time that the use of integrated RTCVD oxynitride (ION), fabricated in a commercially available CVD nitride system, can reduce the gate leakage current by two orders of magnitude and significantly increase the resistance to boron penetration. The ION retains the excellent MOSFET performance, HCI (Hot Carrier Injection) reliability, and ring oscillator results of the control oxide for 0.18 /spl mu/m 1.5 V CMOS technology. This approach should be an attractive gate dielectric for advanced technology.
Keywords :
CMOS integrated circuits; CVD coatings; MOSFET; ULSI; boron; dielectric thin films; hot carriers; integrated circuit technology; leakage currents; 0.18 micron; 1.5 V; B penetration reduction; CMOSFETs; CVD nitride system; MOSFETs; N/sub 2/O; Si:B; SiNO; chip standby power minimization; gate leakage current reduction; hot carrier injection reliability; integrated RTCVD oxynitride gate dielectric; portable applications; ultra-thin gate oxide; Boron; CMOS technology; Cotton; Dielectric substrates; High-K gate dielectrics; Hydrogen; Leakage current; MOSFETs; Silicon; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-4774-9
Type :
conf
DOI :
10.1109/IEDM.1998.746475
Filename :
746475
Link To Document :
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