Title :
Effect of barrier layer on the electrical and reliability characteristics of high-k gate dielectric films
Author :
Yongjoo Jeon ; Byoung Hun Lee ; Zawadzki, K. ; Wen-Jie Qi ; Lucas, A. ; Nieh, R. ; Lee, J.C.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
Electrical and reliability characteristics of several metal/high-k/(barrier layer)/Si capacitor structures have been investigated. The equivalent oxide thickness (EOT) increased as the annealing temperature increased, especially in oxygen ambient. Jet vapor-deposited (JVD) nitride was found to be a good oxidation barrier which is important for achieving thin EOT. Introducing TiO/sub 2/ as a barrier layer reduced the leakage current and EOT of Pt/BST/Si capacitor. The conduction mechanism in Pt/TiO/sub 2//Si structure was found to be tunneling-like behaviour limited by the interfacial layer. Hysteresis could be minimized by the optimization of the annealing process. In reliability characteristics, TiO/sub 2/ revealed no significant degradation and exhibited better wear-out properties than conventional SiO/sub 2/.
Keywords :
MOS capacitors; barium compounds; dielectric thin films; diffusion barriers; permittivity; semiconductor device reliability; strontium compounds; vapour deposited coatings; MOS capacitor; Pt-BaSrTiO/sub 3/-Si; TiO/sub 2/; annealing; dielectric constant; electrical characteristics; equivalent oxide thicknes; gate dielectric film; hysteresis; interfacial barrier layer; jet vapor deposited nitride; leakage current; oxidation; reliability; tunneling conduction; wear-out; Annealing; Binary search trees; Capacitors; Degradation; High K dielectric materials; High-K gate dielectrics; Hysteresis; Leakage current; Oxidation; Temperature;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746476
