DocumentCode
2575184
Title
Advanced dielectrics for gate oxide, DRAM and RF capacitors
Author
van Dover, R.B. ; Fleming, R.M. ; Schneemeyer, L.F. ; Alers, G.B. ; Werder, D.J.
Author_Institution
Lucent Technol., Murray Hill, NJ, USA
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
823
Lastpage
826
Abstract
A new class of high dielectric constant materials is presented based on binary and ternary amorphous metal oxides. These films are compatible with low temperature processing and can be used with conventional metal electrodes like TiN. Metal alloys of both tantalum oxide and titanium oxide will be discussed with dielectric constants as high as 62 and leakage currents of less than 10/sup -8/ A/cm/sup 2/ at 1 MV/cm.
Keywords
DRAM chips; aluminium alloys; capacitors; dielectric thin films; leakage currents; permittivity; tantalum alloys; tin alloys; titanium alloys; zirconium alloys; DRAM; RF capacitors; TaAlO; ZrSnTiO; amorphous metal oxides; dielectric constant; gate oxide; leakage currents; low temperature processing; Amorphous materials; Capacitors; Dielectric materials; Electrodes; High-K gate dielectrics; Inorganic materials; Radio frequency; Random access memory; Temperature; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746482
Filename
746482
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